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GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices
Publication:
GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices
Date
2011
Proceedings Paper
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22308.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Galeti, M.
;
Rodrigues, M.
;
Martino, J.A.
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
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1870
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations
Metrics
Views
1870
since deposited on 2021-10-19
Acq. date: 2025-10-23
Citations