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GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices

Date

2011
Proceedings Paper
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dc.contributor.authorGaleti, M.
dc.contributor.authorRodrigues, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-19T13:40:16Z
dc.date.available2021-10-19T13:40:16Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18941
dc.source.beginpage69
dc.source.conference7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI
dc.source.conferencedate17/01/2011
dc.source.conferencelocationGranada Spain
dc.source.endpage70
dc.title

GIDL behavior with different TiN metal gate thickness and high-k gate dielectric on MuGFET devices

dc.typeProceedings paper
dspace.entity.typePublication
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