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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%
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1949 since deposited on 2021-10-27
Acq. date: 2025-10-23
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1949 since deposited on 2021-10-27
Acq. date: 2025-10-23
Citations