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A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

Date

2019
Journal article
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dc.contributor.authorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.authorUddin, MD Gius
dc.contributor.authorXu, Menglei
dc.contributor.authorCho, Jinyoun
dc.contributor.authorGhannam, Moustafa
dc.contributor.authorGordon, Ivan
dc.contributor.authorSzlufcik, Jozef
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorSivaramakrishnan Radhakrishnan, Hariharsudan
dc.contributor.imecauthorCho, Jinyoun
dc.contributor.imecauthorGhannam, Moustafa
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorSzlufcik, Jozef
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecSivaramakrishnan Radhakrishnan, Hariharsudan::0000-0003-1963-273X
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-27T18:31:47Z
dc.date.available2021-10-27T18:31:47Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn1062-7995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34023
dc.identifier.urlhttps://doi.org/10.1002/pip.3101
dc.source.beginpage959
dc.source.endpage970
dc.source.issue11
dc.source.journalProgress in Photovoltaics Research and Applications
dc.source.volume27
dc.title

A novel silicon heterojunction IBC process flow using partial etching of doped a-Si:H to switch from hole contact to electron contact in situ with efficiencies close to 23%

dc.typeJournal article
dspace.entity.typePublication
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