Publication:

SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

Date

2012
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorMitard, Jerome
dc.contributor.authorVincent, Benjamin
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-20T10:54:24Z
dc.date.available2021-10-20T10:54:24Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/20653
dc.source.conferenceInternational Solid-State Devices and Materials Conference - SSDM
dc.source.conferencedate25/09/2012
dc.source.conferencelocationKyoto Japan
dc.title

SiGe or GeSn source/drain stressors on strained SiGe-channel pFETS: a TCAD study

dc.typeProceedings paper
dspace.entity.typePublication
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