Publication:

Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling

 
dc.contributor.authorVerreck, Devin
dc.contributor.authorArreghini, Antonio
dc.contributor.authorSchanovsky, F.
dc.contributor.authorRzepa, G.
dc.contributor.authorStanojevic, Z.
dc.contributor.authorMitterbauer, F.
dc.contributor.authorKernstock, C.
dc.contributor.authorBaumgartner, O.
dc.contributor.authorKarner, M.
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorRosmeulen, Maarten
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.date.accessioned2022-08-25T15:10:38Z
dc.date.available2022-07-09T02:27:43Z
dc.date.available2022-08-25T15:10:38Z
dc.date.issued2021
dc.identifier.doi10.1109/IEDM19574.2021.9720506
dc.identifier.eisbn978-1-6654-2572-8
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40085
dc.publisherIEEE
dc.source.conferenceIEEE International Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 11-16, 2021
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Understanding the ISPP Slope in Charge Trap Flash Memory and its Impact on 3-D NAND Scaling

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: