Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks

dc.contributor.author	Maldonado, D.
dc.contributor.author	Roldan, J. B.
dc.contributor.author	Roldan, A. M.
dc.contributor.author	Jimenez-Molinos, F.
dc.contributor.author	Hui, F.
dc.contributor.author	Jing, Xu
dc.contributor.author	Wen, C.
dc.contributor.author	Lanza, M.
dc.contributor.author	Shi, Yuanyuan
dc.contributor.imecauthor	Shi, Y.
dc.contributor.imecauthor	Shi, Yuanyuan
dc.contributor.orcidimec	Shi, Yuanyuan::0000-0002-4836-6752
dc.date.accessioned	2021-11-24T09:12:09Z
dc.date.available	2021-11-02T16:05:41Z
dc.date.available	2021-11-24T09:12:09Z
dc.date.issued	2020
dc.identifier.eisbn	978-1-7281-3199-3
dc.identifier.issn	1541-7026
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/38226
dc.publisher	IEEE
dc.source.conference	IEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedate	APR 28-MAY 30, 2020
dc.source.conferencelocation	Dallas, TX, USA
dc.source.journal	na
dc.source.numberofpages	5
dc.title	Influence of the magnetic field on dielectric breakdown in memristors based on h-BN stacks
dc.type	Proceedings paper
dspace.entity.type	Publication
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