Publication:

Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

Date

2022
Proceedings Paper
https://doi.org/10.1109/IEDM45625.2022.10019497
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dc.contributor.authorMertens, Hans
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorOniki, Yusuke
dc.contributor.authorPuttarame Gowda, Pallavi
dc.contributor.authorMannaert, Geert
dc.contributor.authorSebaai, Farid
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorRosseel, Erik
dc.contributor.authorDupuy, Emmanuel
dc.contributor.authorPeter, Antony
dc.contributor.authorVandersmissen, Kevin
dc.contributor.authorRadisic, Dunja
dc.contributor.authorBriggs, Basoene
dc.contributor.authorBatuk, Dmitry
dc.contributor.authorGeypen, Jef
dc.contributor.authorMartinez Alanis, Gerardo Tadeo
dc.contributor.authorSeidel, Felix
dc.contributor.authorRichard, Olivier
dc.contributor.authorChan, BT
dc.contributor.authorMitard, Jerome
dc.contributor.imecauthorMertens, Hans
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorOniki, Yusuke
dc.contributor.imecauthorPuttarame Gowda, Pallavi
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorDupuy, Emmanuel
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorVandersmissen, Kevin
dc.contributor.imecauthorRadisic, Dunja
dc.contributor.imecauthorBriggs, Basoene
dc.contributor.imecauthorBatuk, Dmitry
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorMartinez Alanis, Gerardo Tadeo
dc.contributor.imecauthorSeidel, Felix
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorMitard, Jerome
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecOniki, Yusuke::0000-0002-6619-1327
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecDupuy, Emmanuel::0000-0003-3341-1618
dc.contributor.orcidimecPeter, Antony::0000-0001-5941-0563
dc.contributor.orcidimecBatuk, Dmitry::0000-0002-6384-6690
dc.contributor.orcidimecMartinez Alanis, Gerardo Tadeo::0000-0001-5036-0491
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDentoni Litta, Eugenio::0000-0003-0333-376X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2023-06-01T13:14:14Z
dc.date.available2023-05-25T20:20:01Z
dc.date.available2023-06-01T13:14:14Z
dc.date.issued2022
dc.identifier.doi10.1109/IEDM45625.2022.10019497
dc.identifier.eisbn978-1-6654-8959-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41619
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.title

Forksheet FETs with Bottom Dielectric Isolation, Self-Aligned Gate Cut, and Isolation between Adjacent Source-Drain Structures

dc.typeProceedings paper
dspace.entity.typePublication
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