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Hot hole degradation effects in lateral nDMOS transistors
Publication:
Hot hole degradation effects in lateral nDMOS transistors
Date
2004-10
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Moens, Peter
;
Van den Bosch, Geert
;
De Keukeleire, Catherine
;
Degraeve, Robin
;
Tack, Marnix
;
Groeseneken, Guido
Journal
IEEE Trans. Electron Devices
Abstract
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1906
since deposited on 2021-10-15
Acq. date: 2025-10-27
Citations
Metrics
Views
1906
since deposited on 2021-10-15
Acq. date: 2025-10-27
Citations