Publication:

Hot hole degradation effects in lateral nDMOS transistors

Date

2004-10
Journal article
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dc.contributor.authorMoens, Peter
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDe Keukeleire, Catherine
dc.contributor.authorDegraeve, Robin
dc.contributor.authorTack, Marnix
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorMoens, Peter
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.accessioned2021-10-15T14:56:03Z
dc.date.available2021-10-15T14:56:03Z
dc.date.issued2004-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9311
dc.source.beginpage1704
dc.source.endpage1710
dc.source.issue51
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume2004
dc.title

Hot hole degradation effects in lateral nDMOS transistors

dc.typeJournal article
dspace.entity.typePublication
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