Publication:

Stress and wafer warpage analysis of GaN thin film induced by transfer bonding process on 200mm Si substrate

Date

 
dc.contributor.authorLofrano, Melina
dc.contributor.authorPham, Nga
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorSoussan, Philippe
dc.contributor.imecauthorLofrano, Melina
dc.contributor.imecauthorPham, Nga
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorSoussan, Philippe
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecSoussan, Philippe::0000-0002-1347-6978
dc.date.accessioned2021-10-21T09:32:05Z
dc.date.available2021-10-21T09:32:05Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22719
dc.source.conference14th Int. Conf on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsyst. - EuroSimE
dc.source.conferencedate15/04/2013
dc.source.conferencelocationWroclaw Poland
dc.title

Stress and wafer warpage analysis of GaN thin film induced by transfer bonding process on 200mm Si substrate

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections: