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Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
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Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Date
2007
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hayama, K.
;
Takakura, K.
;
Yoneoka, M.
;
Ohyama, H.
;
Rafi, J.M.
;
Mercha, Abdelkarim
;
Simoen, Eddy
;
Claeys, Cor
Journal
Microelectronic Engineering
Abstract
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1956
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations
Metrics
Views
1956
since deposited on 2021-10-16
Acq. date: 2025-10-23
Citations