Publication:

Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

Date

2007
Journal article
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dc.contributor.authorHayama, K.
dc.contributor.authorTakakura, K.
dc.contributor.authorYoneoka, M.
dc.contributor.authorOhyama, H.
dc.contributor.authorRafi, J.M.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T16:32:02Z
dc.date.available2021-10-16T16:32:02Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12261
dc.source.beginpage2125
dc.source.endpage2128
dc.source.issue9_10
dc.source.journalMicroelectronic Engineering
dc.source.volume84
dc.title

Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation

dc.typeJournal article
dspace.entity.typePublication
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