Publication:

Superior reliability of high mobility (Si)Ge channel pMOSFETs

Date

2013
Journal article
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dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorRoussel, Philippe
dc.contributor.authorCho, Moon Ju
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorMitard, Jerome
dc.contributor.authorEneman, Geert
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorGrasser, Tibor
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.date.accessioned2021-10-21T07:42:00Z
dc.date.available2021-10-21T07:42:00Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22363
dc.source.beginpage250
dc.source.endpage256
dc.source.journalMicroelectronic Engineering
dc.source.volume109
dc.title

Superior reliability of high mobility (Si)Ge channel pMOSFETs

dc.typeJournal article
dspace.entity.typePublication
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