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Strategies for CMOS low equivalent oxide thickness achievement with high-k oxides grown on Si(001) by MBE

Date

2008
Proceedings Paper
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dc.contributor.authorBeccera, Loic
dc.contributor.authorBaboux, Nicolas
dc.contributor.authorPlossu, Carole
dc.contributor.authorMerckling, Clement
dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorSaint-Girons, Guillaume
dc.contributor.authorVilquin, Bertrand
dc.contributor.authorHollinger, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-17T06:16:16Z
dc.date.available2021-10-17T06:16:16Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13360
dc.source.beginpage1073-H3-08
dc.source.conferenceMaterials Science of High-k Dielectric Stackx - From Fundamentals to Technology
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Strategies for CMOS low equivalent oxide thickness achievement with high-k oxides grown on Si(001) by MBE

dc.typeProceedings paper
dspace.entity.typePublication
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