Publication:

Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch

Date

2023
Journal article
https://doi.org/10.1016/j.mee.2023.112058
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dc.contributor.authorVereecke, Guy
dc.contributor.authorDe Coster, Hanne
dc.contributor.authorDochain, Denis
dc.contributor.authorNurekeyeva, Kunsulu
dc.contributor.authorConlan, Shona
dc.contributor.authorNsimba, Anthony
dc.contributor.authorWostyn, Kurt
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.imecauthorVereecke, Guy
dc.contributor.imecauthorDe Coster, Hanne
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.orcidimecVereecke, Guy::0000-0001-9058-9338
dc.contributor.orcidimecDe Coster, Hanne::0000-0002-5968-7703
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecAltamirano Sanchez, Efrain::0000-0003-3235-6055
dc.date.accessioned2023-10-13T07:11:28Z
dc.date.available2023-08-10T17:37:00Z
dc.date.available2023-10-13T07:11:28Z
dc.date.embargo9999-12-31
dc.date.issued2023
dc.identifier.doi10.1016/j.mee.2023.112058
dc.identifier.issn0167-9317
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42310
dc.publisherELSEVIER
dc.source.beginpageArt. 112058
dc.source.endpagena
dc.source.issue15 July
dc.source.journalMICROELECTRONIC ENGINEERING
dc.source.numberofpages5
dc.source.volume279
dc.title

Using water structuring by ions to address pattern loading in wet HF-based oxide recess etch

dc.typeJournal article
dspace.entity.typePublication
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