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Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Publication:
Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Date
2016
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Kikuchi, Yoshiaki
;
Chiarella, Thomas
;
De Roest, David
;
Blanquart, Timothee
;
De Keersgieter, An
;
Kenis, Karine
;
Peter, Antony
;
Ong, Patrick
;
Van Besien, Els
;
Tao, Zheng
;
Kim, Min-Soo
;
Kubicek, Stefan
;
Chew, Soon Aik
;
Schram, Tom
;
Demuynck, Steven
;
Mocuta, Anda
;
Mocuta, Dan
;
Horiguchi, Naoto
Journal
IEEE Electron Device Letters
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1930
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations
Metrics
Views
1930
since deposited on 2021-10-23
Acq. date: 2025-10-23
Citations