Publication:

Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

Date

2016
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorChiarella, Thomas
dc.contributor.authorDe Roest, David
dc.contributor.authorBlanquart, Timothee
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKenis, Karine
dc.contributor.authorPeter, Antony
dc.contributor.authorOng, Patrick
dc.contributor.authorVan Besien, Els
dc.contributor.authorTao, Zheng
dc.contributor.authorKim, Min-Soo
dc.contributor.authorKubicek, Stefan
dc.contributor.authorChew, Soon Aik
dc.contributor.authorSchram, Tom
dc.contributor.authorDemuynck, Steven
dc.contributor.authorMocuta, Anda
dc.contributor.authorMocuta, Dan
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorBlanquart, Timothee
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorOng, Patrick
dc.contributor.imecauthorVan Besien, Els
dc.contributor.imecauthorTao, Zheng
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecOng, Patrick::0000-0002-2072-292X
dc.contributor.orcidimecVan Besien, Els::0000-0002-5174-2229
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-23T11:47:14Z
dc.date.available2021-10-23T11:47:14Z
dc.date.issued2016
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26829
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7508380/?arnumber=7508380
dc.source.beginpage1084
dc.source.endpage1087
dc.source.issue9
dc.source.journalIEEE Electron Device Letters
dc.source.volume37
dc.title

Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections:
Articles