Publication:

Impact of Al-doping on Al:HfO2 dielectric reliability in MIM capacitors

Date

2025
Proceedings Paper
https://doi.org/10.1109/IRPS48204.2025.10982827
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dc.contributor.authorFohn, Corinna
dc.contributor.authorZharfan, F.
dc.contributor.authorChery, Emmanuel
dc.contributor.authorCroes, Kristof
dc.contributor.authorStucchi, Michele
dc.contributor.authorAfanasiev, Valeri
dc.date.accessioned2025-11-27T15:37:02Z
dc.date.available2025-11-27T15:37:02Z
dc.date.createdwos2025-10-18
dc.date.issued2025
dc.identifier.doi10.1109/IRPS48204.2025.10982827
dc.identifier.isbn979-8-3315-0478-6
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/58472
dc.language.isoeng
dc.publisherIEEE
dc.source.conference2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
dc.source.conferencedate2024-03-25
dc.source.conferencelocationMonterey
dc.source.journal2025 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, IRPS
dc.source.numberofpages8
dc.subject.keywordsHFO2
dc.subject.keywords(100)SI
dc.subject.keywordsHFALO
dc.title

Impact of Al-doping on Al:HfO2 dielectric reliability in MIM capacitors

dc.typeProceedings paper
dspace.entity.typePublication
imec.identified.statusLibrary
imec.internal.crawledAt2025-10-22
imec.internal.sourcecrawler
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