Publication:

Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

Date

2021
Journal article
https://doi.org/10.1109/TED.2021.3049758
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dc.contributor.authorAli, Tarek
dc.contributor.authorMertens, Konstantin
dc.contributor.authorOlivo, Ricardo
dc.contributor.authorRudolph, Matthias
dc.contributor.authorOehler, Sebastian
dc.contributor.authorKuhnel, Kati
dc.contributor.authorLehninger, David
dc.contributor.authorMuller, Franz
dc.contributor.authorHoffmann, Raik
dc.contributor.authorSchramm, Philipp
dc.contributor.authorBiedermann, Kati
dc.contributor.authorMetzger, Joachim
dc.contributor.authorBinder, Robert
dc.contributor.authorCzernohorsky, Malte
dc.contributor.authorKampfe, Thomas
dc.contributor.authorMuller, Johannes
dc.contributor.authorSeidel, Konrad
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorEng, Lukas M.
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidextAli, Tarek::0000-0002-9840-3531
dc.contributor.orcidextRudolph, Matthias::0000-0002-4486-0112
dc.contributor.orcidextOehler, Sebastian::0000-0002-5394-2857
dc.contributor.orcidextLehninger, David::0000-0002-1545-5177
dc.contributor.orcidextMuller, Franz::0000-0002-6564-9121
dc.contributor.orcidextKampfe, Thomas::0000-0002-4672-8676
dc.contributor.orcidextEng, Lukas M.::0000-0002-2484-4158
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2023-08-07T09:56:45Z
dc.date.available2023-06-20T10:38:43Z
dc.date.available2023-08-07T09:56:45Z
dc.date.embargo9999-12-31
dc.date.issued2021
dc.identifier.doi10.1109/TED.2021.3049758
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42014
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2098
dc.source.endpage2106
dc.source.issue4
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages9
dc.source.volume68
dc.subject.keywordsTEMPERATURE-DEPENDENT OPERATION
dc.subject.keywordsNONVOLATILE MEMORY
dc.subject.keywordsFLASH
dc.subject.keywordsFEFET
dc.title

Impact of the Nonlinear Dielectric Hysteresis Properties of a Charge Trap Layer in a Novel Hybrid High-Speed and Low-Power Ferroelectric or Antiferroelectric HSO/HZO Boosted Charge Trap Memory

dc.typeJournal article
dspace.entity.typePublication
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