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A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Publication:
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Date
2010-12
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Marcon, Denis
;
Kauerauf, Thomas
;
Medjdoub, Farid
;
Das, Jo
;
Van Hove, Marleen
;
Srivastava, Puneet
;
Cheng, Kai
;
Leys, Maarten
;
Mertens, Robert
;
Decoutere, Stefaan
;
Meneghesso, Gaudenzio
;
Zanoni, Enrico
;
Borghs, Gustaaf
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1972
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations
Metrics
Views
1972
since deposited on 2021-10-18
Acq. date: 2025-10-23
Citations