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A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

Date

2010-12
Proceedings Paper
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dc.contributor.authorMarcon, Denis
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorMedjdoub, Farid
dc.contributor.authorDas, Jo
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSrivastava, Puneet
dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorMertens, Robert
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorMeneghesso, Gaudenzio
dc.contributor.authorZanoni, Enrico
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMertens, Robert
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-18T18:45:53Z
dc.date.available2021-10-18T18:45:53Z
dc.date.embargo9999-12-31
dc.date.issued2010-12
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17571
dc.source.beginpage472
dc.source.conferenceIEEE International Electron Device Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage472
dc.title

A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs

dc.typeProceedings paper
dspace.entity.typePublication
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