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Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon

Date

2000
Journal article
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dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorStalmans, Lieven
dc.contributor.authorBilyalov, Renat
dc.contributor.authorPoortmans, Jef
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-14T13:07:07Z
dc.date.available2021-10-14T13:07:07Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4456
dc.source.beginpage119
dc.source.endpage127
dc.source.issue1_2
dc.source.journalJournal of Crystal Growth
dc.source.volume212
dc.title

Transmission electron microscopy investigation of the crystallographic quality of silicon films grown epitaxially on porous silicon

dc.typeJournal article
dspace.entity.typePublication
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