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High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?
Publication:
High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?
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Date
2009
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yu, H.Y
;
Chang, S.Z.
;
Aoulaiche, Marc
;
Kaczer, Ben
;
Absil, Philippe
;
Adelmann, Christoph
;
Hoffmann, Thomas Y.
;
Biesemans, Serge
;
Wann, C
;
Mii, Y.J
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1867
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Acq. date: 2025-12-09
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Views
1867
since deposited on 2021-10-18
1
last month
Acq. date: 2025-12-09
Citations