Publication:

High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?

Date

2009
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorYu, H.Y
dc.contributor.authorChang, S.Z.
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorKaczer, Ben
dc.contributor.authorAbsil, Philippe
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorWann, C
dc.contributor.authorMii, Y.J
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.date.accessioned2021-10-18T05:39:29Z
dc.date.available2021-10-18T05:39:29Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16592
dc.source.beginpage69
dc.source.conferenceInternational Symposium on VLSI Technology, Systems, and Applications - VLSI-TSA
dc.source.conferencedate27/04/2009
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage70
dc.title

High-k/ metal-gate stack work-function tuning by rare-earth capping layers: interface dipole or bulk charge?

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions