Publication:

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

Date

2021
Journal article
https://doi.org/10.1016/j.microrel.2021.114061
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dc.contributor.authorMagnani, Alessandro
dc.contributor.authorCosnier, Thibault
dc.contributor.authorAmirifar, Nooshin
dc.contributor.authorChatterjee, Urmimala
dc.contributor.authorZhao, Ming
dc.contributor.authorLi, Xiangdong
dc.contributor.authorGeens, Karen
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMagnani, Alessandro
dc.contributor.imecauthorCosnier, Thibault
dc.contributor.imecauthorAmirifar, Nooshin
dc.contributor.imecauthorChatterjee, Urmimala
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLi, Xiangdong
dc.contributor.imecauthorGeens, Karen
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecGeens, Karen::0000-0003-1815-3972
dc.contributor.orcidimecMagnani, Alessandro::0000-0001-6719-7467
dc.contributor.orcidimecCosnier, Thibault::0000-0001-7991-7222
dc.contributor.orcidimecChatterjee, Urmimala::0000-0002-8934-6774
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2022-02-21T09:22:31Z
dc.date.available2022-02-21T09:22:31Z
dc.date.issued2021
dc.identifier.doi10.1016/j.microrel.2021.114061
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/38920
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage114061
dc.source.issuena
dc.source.journalMICROELECTRONICS RELIABILITY
dc.source.numberofpages9
dc.source.volume118
dc.title

Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates

dc.typeJournal article
dspace.entity.typePublication
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