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Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
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Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI
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Date
2007-01
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Put, Sofie
;
Simoen, Eddy
;
Augendre, Emmanuel
;
Claeys, Cor
;
Van Uffelen, Marco
;
Leroux, Paul
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1871
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations
Metrics
Views
1871
since deposited on 2021-10-16
Acq. date: 2026-01-06
Citations