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Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI

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dc.contributor.authorPut, Sofie
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorClaeys, Cor
dc.contributor.authorVan Uffelen, Marco
dc.contributor.authorLeroux, Paul
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T18:49:37Z
dc.date.available2021-10-16T18:49:37Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12741
dc.source.beginpage23
dc.source.conferenceEUROSOI Workshop Proceedings: 3rd Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits
dc.source.conferencedate24/01/2007
dc.source.conferencelocationLeuven Belgium
dc.source.endpage24
dc.title

Impact of Si channel thickness and buried oxide quality on the proton radiation behavior of 65 nm FD SOI

dc.typeProceedings paper
dspace.entity.typePublication
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