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AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

Date

2007-01
Journal article
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDerluyn, Joff
dc.contributor.authorDegroote, Stefan
dc.contributor.authorXiao, Dongping
dc.contributor.authorLorenz, Anne
dc.contributor.authorBoeykens, Steven
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:16:25Z
dc.date.available2021-10-16T15:16:25Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11852
dc.source.beginpage822
dc.source.endpage825
dc.source.journalJournal of Crystal Growth
dc.source.volume298
dc.title

AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

dc.typeJournal article
dspace.entity.typePublication
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