Skip to content
Institutional repository
Communities & Collections
Browse
Site
Log In
imec Publications
Conference contributions
A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Publication:
A finite element study of process induced stress in the transistor channel: effects of silicide contact and gate stack
Date
2004
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Torregiani, Cristina
;
Liu, Joy
;
Vandevelde, Bart
;
Degryse, Dominiek
;
Van Dal, Mark
;
Benedetti, Alessandro
;
Lauwers, Anne
;
Maex, Karen
Journal
Abstract
Description
Metrics
Views
1919
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations
Metrics
Views
1919
since deposited on 2021-10-15
Acq. date: 2025-10-23
Citations