Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Lin, Zaoyang; Wu, Xiangyu; Cott, Daire; Shi, Yuanyuan; Medina Silva, Henry; Sergeant, Stefanie; Conard, Thierry; Meersschaut, Johan; Nalin Mehta, Ankit; Groven, Benjamin; Morin, Pierre; Asselberghs, Inge; Lockhart de la Rosa, Cesar Javier; Kar, Gouri Sankar; Lin, Dennis; Delabie, Annelies

doi:10.1021/acsaelm.4c00309

Publication:

Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Date

2024

Journal article

https://doi.org/10.1021/acsaelm.4c00309

Simple item page Full metadata Statistics

Author(s)

;

;

;

;

;

;

;

;

;

;

;

;

Lockhart de la Rosa, Cesar Javier

;

Kar, Gouri Sankar

;

Lin, Dennis

;

Delabie, Annelies

Journal

ACS APPLIED ELECTRONIC MATERIALS

Statistics

678 since deposited on 2024-06-13

1last month

Acq. date: 2026-01-25

Top-Gate Stack Engineering Featuring a High-Îº Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Date

Author(s)

Journal

Abstract

Description

Statistics

Views

Citations

Statistics

Views

Citations