Publication:

Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

Date

2024
Journal article
https://doi.org/10.1021/acsaelm.4c00309
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dc.contributor.authorLin, Zaoyang
dc.contributor.authorWu, Xiangyu
dc.contributor.authorCott, Daire
dc.contributor.authorShi, Yuanyuan
dc.contributor.authorMedina Silva, Henry
dc.contributor.authorSergeant, Stefanie
dc.contributor.authorConard, Thierry
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorGroven, Benjamin
dc.contributor.authorMorin, Pierre
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorLin, Dennis
dc.contributor.authorDelabie, Annelies
dc.contributor.imecauthorLin, Zaoyang
dc.contributor.imecauthorWu, Xiangyu
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorShi, Yuanyuan
dc.contributor.imecauthorSergeant, Stefanie
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorGroven, Benjamin
dc.contributor.imecauthorMorin, Pierre
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorMedina Silva, Henry
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.orcidimecCott, Daire::0009-0000-0890-8820
dc.contributor.orcidimecShi, Yuanyuan::0000-0002-4836-6752
dc.contributor.orcidimecSergeant, Stefanie::0000-0001-9923-0903
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecGroven, Benjamin::0000-0002-5781-7594
dc.contributor.orcidimecMorin, Pierre::0000-0002-4637-496X
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.contributor.orcidimecMedina Silva, Henry::0000-0003-1461-5703
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecLockhart de la Rosa, Cesar Javier::0000-0002-1401-0141
dc.date.accessioned2024-08-22T14:53:49Z
dc.date.available2024-06-13T18:13:03Z
dc.date.available2024-08-22T14:53:49Z
dc.date.issued2024
dc.description.wosFundingTextThis work was done in the imec IIAP core CMOS programs and received funding from the European Union's Graphene Flagship (Grant Agreement No. 952792, 2D-EPL).
dc.identifier.doi10.1021/acsaelm.4c00309
dc.identifier.issn2637-6113
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44022
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage4213
dc.source.endpage4222
dc.source.issue6
dc.source.journalACS APPLIED ELECTRONIC MATERIALS
dc.source.numberofpages10
dc.source.volume6
dc.subject.keywordsBAND ALIGNMENT
dc.subject.keywordsMOS2
dc.subject.keywordsDEPOSITION
dc.subject.keywordsMONOLAYER
dc.subject.keywordsFUNCTIONALIZATION
dc.subject.keywordsDIELECTRICS
dc.subject.keywordsGROWTH
dc.subject.keywordsOXIDES
dc.subject.keywordsCMOS
dc.subject.keywordsHFO2
dc.title

Top-Gate Stack Engineering Featuring a High-κ Gadolinium Aluminate Interfacial Layer for Field-Effect Transistors Based on Two-Dimensional Transition-Metal Dichalcogenides

dc.typeJournal article
dspace.entity.typePublication
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