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A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

Date

1996
Proceedings Paper
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dc.contributor.authorDegraeve, Robin
dc.contributor.authorDe Blauwe, Jan
dc.contributor.authorOgier, Jean-Luc
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-09-29T14:25:14Z
dc.date.available2021-09-29T14:25:14Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1187
dc.source.beginpage327
dc.source.conferenceInternational Electron Devices Meeting. Technical Digest - IEDM
dc.source.conferencedate8/12/1996
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage330
dc.title

A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

dc.typeProceedings paper
dspace.entity.typePublication
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