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Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs
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Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1-xGex MOSFETs
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Date
1999
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3272.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
De Meyer, Kristin
Journal
Solid-State Electronics
Abstract
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1921
since deposited on 2021-10-06
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Acq. date: 2026-01-10
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Views
1921
since deposited on 2021-10-06
1
last month
1
last week
Acq. date: 2026-01-10
Citations