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Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells
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Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells
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Date
2020
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ali, T.
;
Kuehnel, K.
;
Czernohorsky, M.
;
Rudolph, M.
;
Paetzold, B.
;
Olivo, R.
;
Lehninger, D.
;
Mertens, K.
;
Mueller, F.
;
Lederer, M.
;
Hoffmann, R.
;
Mart, C.
;
Kalkani, M. N.
;
Steinke, P.
;
Kaempfe, T.
;
Mueller, J.
;
Seidel, K.
;
Eng, L. M.
;
Van Houdt, Jan
Journal
na
Abstract
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1806
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Views
1806
since deposited on 2021-11-02
2
last month
Acq. date: 2025-12-15
Citations