Publication:

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells

Date

2020
Proceedings Paper
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dc.contributor.authorAli, T.
dc.contributor.authorKuehnel, K.
dc.contributor.authorCzernohorsky, M.
dc.contributor.authorRudolph, M.
dc.contributor.authorPaetzold, B.
dc.contributor.authorOlivo, R.
dc.contributor.authorLehninger, D.
dc.contributor.authorMertens, K.
dc.contributor.authorMueller, F.
dc.contributor.authorLederer, M.
dc.contributor.authorHoffmann, R.
dc.contributor.authorMart, C.
dc.contributor.authorKalkani, M. N.
dc.contributor.authorSteinke, P.
dc.contributor.authorKaempfe, T.
dc.contributor.authorMueller, J.
dc.contributor.authorSeidel, K.
dc.contributor.authorEng, L. M.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorVan Houdt, J.
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidextLederer, M.::0000-0002-1739-2747
dc.contributor.orcidextKaempfe, T.::0000-0002-4672-8676
dc.contributor.orcidimecVan Houdt, Jan::1234-1234-1234-1235
dc.date.accessioned2021-12-02T15:39:40Z
dc.date.available2021-11-02T15:57:33Z
dc.date.available2021-12-02T15:39:40Z
dc.date.issued2020
dc.identifier.eisbn978-1-7281-3199-3
dc.identifier.issn1541-7026
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37616
dc.publisherIEEE
dc.source.conferenceIEEE International Reliability Physics Symposium (IRPS)
dc.source.conferencedateAPR 28-MAY 30, 2020
dc.source.conferencelocationDallas, TX, USA
dc.source.journalna
dc.source.numberofpages9
dc.title

Impact of Ferroelectric Wakeup on Reliability of Laminate based Si-doped Hafnium Oxide (HSO) FeFET Memory Cells

dc.typeProceedings paper
dspace.entity.typePublication
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