Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Cao, Jingchen; Wynocker, Isabella; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao; Van den Bosch, Geert; Linten, Dimitri

doi:10.1109/TNS.2022.3227941

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Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

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2023-04-18

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https://doi.org/10.1109/TNS.2022.3227941

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IEEE TRANSACTIONS ON NUCLEAR SCIENCE

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1162 since deposited on 2023-05-27

Acq. date: 2026-01-26

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

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