Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

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Published version 1.23 MB

Author(s)

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Wynocker, Isabella

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Reed, Robert A.

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Alles, Michael L.

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Schrimpf, Ronald D.

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Fleetwood, Daniel M.

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Arreghini, Antonio

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Rosmeulen, Maarten

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Van den Bosch, Geert

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Linten, Dimitri

Journal

IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Metrics

1160 since deposited on 2023-05-27

Acq. date: 2025-10-23