Publication:

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

Date

2023-04-18
Journal article
https://doi.org/10.1109/TNS.2022.3227941
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dc.contributor.authorCao, Jingchen
dc.contributor.authorWynocker, Isabella
dc.contributor.authorZhang, En Xia
dc.contributor.authorReed, Robert A.
dc.contributor.authorAlles, Michael L.
dc.contributor.authorSchrimpf, Ronald D.
dc.contributor.authorFleetwood, Daniel M.
dc.contributor.authorArreghini, Antonio
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorBastos, Joao
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorBastos, Joao
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecBastos, Joao::0000-0002-8877-9850
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.date.accessioned2023-08-01T15:01:09Z
dc.date.available2023-05-27T20:00:59Z
dc.date.available2023-06-27T08:10:58Z
dc.date.available2023-08-01T15:01:09Z
dc.date.embargo9999-12-31
dc.date.issued2023-04-18
dc.description.wosFundingTextThis work was supported in part by the Defense Threat Reduction Agency through its Basic Research Program and in part by the Air Force Office of Scientific Research under Grant FA9550-17-1-0046 and Grant FA9550-22-1-0012. The work of Isabella Wynocker was supported in part by the SyBBURE Searle Undergraduate Research Program and in part by the SCALE Workforce Development Program.
dc.identifier.doi10.1109/TNS.2022.3227941
dc.identifier.issn0018-9499
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41652
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage634
dc.source.endpage640
dc.source.issue4
dc.source.journalIEEE TRANSACTIONS ON NUCLEAR SCIENCE
dc.source.numberofpages7
dc.source.volume70
dc.subject.keywordsBORDER TRAPS
dc.subject.keywordsINSTABILITIES
dc.subject.keywordsINTERFACE
dc.subject.keywordsMODEL
dc.title

Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide

dc.typeJournal article
dspace.entity.typePublication
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