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Laser annealing for ultra-shallow junction formation in advanced CMOS

Date

2002
Proceedings Paper
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dc.contributor.authorSurdeanu, Radu
dc.contributor.authorPonomarev, Youri
dc.contributor.authorCerutti, R.
dc.contributor.authorPawlak, Bartek
dc.contributor.authorNanver, L.K.
dc.contributor.authorHoflijk, Ilse
dc.contributor.authorStolk, Peter
dc.contributor.authorDachs, Charles
dc.contributor.authorVerheijen, M.A.
dc.contributor.authorKaiser, M.
dc.contributor.authorHopstaken, M.J.P.
dc.contributor.authorvan Berkum, J.G.M.
dc.contributor.authorRoozeboom, F.
dc.contributor.authorLindsay, Richard
dc.contributor.imecauthorPawlak, Bartek
dc.contributor.imecauthorHoflijk, Ilse
dc.date.accessioned2021-10-14T23:17:54Z
dc.date.available2021-10-14T23:17:54Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6862
dc.source.beginpage413
dc.source.conferenceRapid Thermal And Other Short-Time Processing Technologies III
dc.source.conferencedate12/05/2002
dc.source.conferencelocationPhiladelphia, PA USA
dc.source.endpage426
dc.title

Laser annealing for ultra-shallow junction formation in advanced CMOS

dc.typeProceedings paper
dspace.entity.typePublication
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