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The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks
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1873 since deposited on 2021-10-18
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Acq. date: 2025-10-24
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Views
1873 since deposited on 2021-10-18
407item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations