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The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks

Date

2009
Journal article
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dc.contributor.authorVellianitis, Georgios
dc.contributor.authorVan Dal, Mark
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorDuriez, Blandine
dc.contributor.authorVoogt, Frans
dc.contributor.authorKaiser, Monja
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorLander, Rob
dc.contributor.imecauthorVellianitis, Georgios
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorDuriez, Blandine
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.date.accessioned2021-10-18T04:36:28Z
dc.date.available2021-10-18T04:36:28Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16451
dc.source.beginpage1548
dc.source.endpage1553
dc.source.issue7
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume56
dc.title

The influence of TiN thickness and SiO2 formation method on the structural and electrical properties of TiN/HfO2/SiO2 gate stacks

dc.typeJournal article
dspace.entity.typePublication
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