Publication:

Ge FETs gate stack passivation options and their scalability to low EOT

Date

2010
Proceedings Paper
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dc.contributor.authorBellenger, Florence
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorNyns, Laura
dc.contributor.authorZahid, Mohammed
dc.contributor.authorHoussa, Michel
dc.contributor.authorVrancken, Evi
dc.contributor.authorTseng, Joshua
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorHeyns, Marc
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorVrancken, Evi
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T15:19:41Z
dc.date.available2021-10-18T15:19:41Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16728
dc.source.beginpage1040
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate22/09/2010
dc.source.conferencelocationTokyo Japan
dc.source.endpage1041
dc.title

Ge FETs gate stack passivation options and their scalability to low EOT

dc.typeProceedings paper
dspace.entity.typePublication
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