Publication:

Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments

Date

2002
Journal article
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dc.contributor.authorSatta, Alessandra
dc.contributor.authorBaklanov, Mikhaïl
dc.contributor.authorRichard, Olivier
dc.contributor.authorVantomme, Andre
dc.contributor.authorBender, Hugo
dc.contributor.authorConard, Thierry
dc.contributor.authorMaex, Karen
dc.contributor.authorLi, W.M.
dc.contributor.authorElers, K. E.
dc.contributor.authorHaukka, S.
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorVantomme, Andre
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMaex, Karen
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-14T23:02:05Z
dc.date.available2021-10-14T23:02:05Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6789
dc.source.beginpage59
dc.source.endpage69
dc.source.issue1_2
dc.source.journalMicroelectronic Engineering
dc.source.volume60
dc.title

Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments

dc.typeJournal article
dspace.entity.typePublication
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