The enduring legacy of scanning spreading resistance microscopy: Overview, advancements, and future directions

Abstract

Scanning spreading resistance microscopy (SSRM) has recently celebrated 30 years of existence when counting from the original patent of 1994. In this time, the technique has experienced an incredible journey with substantial evolutions that transformed SSRM from a small-scale experiment into a staple for chip manufacturing laboratories for physical analysis of materials, failure analysis, and process development of integrated circuits. As the nanoelectronics industry is ready for a new inflection point, with the introduction of nanosheet field-effect transistor to replace FinFETs and cell track scaling architectures such as the complementary field-effect transistors, SSRM is once again at a turning point. This review aims to highlight the state-of-the-art while discussing the emerging challenges introduced by the ever-increasing complexity in complementary metal–oxide–semiconductor (CMOS) manufacturing. We start by illustrating the unique capability of the SSRM technique, its origin, and its evolution. Next, we continue by showing the considerable research effort that enabled SSRM to transition to a tomographic sensing method in support of FinFET transistors. Here, the high aspect ratio fin geometry and the complex contacts technology have imposed important modifications to the original method. Later, we elaborate on some of the key challenges introduced by the upcoming device transition from three-sided channel FinFETs into nanosheet FETs, i.e., offering a four-sided electrostatic control of the channel. Finally, we present the use of machine learning for automation in carrier calibration with increased accuracy. We close by introducing some of the concepts that we consider promising for further extension of SSRM to obtain sub-nm structural information and doping profiles in the area of advanced FinFETs and nanosheet FET technologies, including (a) correlative analysis flow, (b) liquid-assisted probing, and (c) top–down and bottom–up multi-probe sensing schemes to merge low- and high-pressure SSRM scans.