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The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide

Date

1999
Proceedings Paper
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dc.contributor.authorDetavernier, C.
dc.contributor.authorAlves Donaton, Ricardo
dc.contributor.authorMaex, Karen
dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorVan Meirhaeghe, R.
dc.contributor.authorCardon, F.
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorBender, Hugo
dc.date.accessioned2021-10-06T11:03:43Z
dc.date.available2021-10-06T11:03:43Z
dc.date.embargo9999-12-31
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3414
dc.source.beginpage139
dc.source.conferenceAdvanced Interconnects and Contacts
dc.source.conferencedate05/04/1999
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage144
dc.title

The influence of Ti capping layers on CoSi2 formation in the presence of interfacial oxide

dc.typeProceedings paper
dspace.entity.typePublication
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