Publication:

Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

Date

2019-12
Journal article
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dc.contributor.authorHe, Liang
dc.contributor.authorZhao, Pan
dc.contributor.authorLiu, Jiahao
dc.contributor.authorSu, Yahui
dc.contributor.authorChen, Hua
dc.contributor.authorJia, Xiaofei
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorMitard, Jerome
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-27T10:10:24Z
dc.date.available2021-10-27T10:10:24Z
dc.date.embargo9999-12-31
dc.date.issued2019-12
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33114
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8570775
dc.source.beginpage1050
dc.source.endpage1056
dc.source.issue2
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume66
dc.title

Gate metal and cap layer effects on Ge nMOSFETs low frequency noise behavior

dc.typeJournal article
dspace.entity.typePublication
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