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Applying complementary trap characterization technique to crystalline g-phase-Al2O3 for improved understanding of nonvolatile memory operation and reliability

Date

2010
Journal article
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dc.contributor.authorZahid, Mohammed
dc.contributor.authorRuiz Aguado, Daniel
dc.contributor.authorDegraeve, Robin
dc.contributor.authorWang, W.C
dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorAfanasiev, V.V.
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-19T00:52:39Z
dc.date.available2021-10-19T00:52:39Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn10.1109/TED.2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18403
dc.source.beginpage2907
dc.source.endpage2916
dc.source.issue11
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume57
dc.title

Applying complementary trap characterization technique to crystalline g-phase-Al2O3 for improved understanding of nonvolatile memory operation and reliability

dc.typeJournal article
dspace.entity.typePublication
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