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Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

Date

1996
Proceedings Paper
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dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorClauws, P.
dc.contributor.authorKaniava, Arvydas
dc.contributor.authorLibezny, Milan
dc.contributor.authorGaubas, Eugenijus
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRichter, H.
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-09-29T15:44:37Z
dc.date.available2021-09-29T15:44:37Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1610
dc.source.beginpage229
dc.source.conferenceProceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95
dc.source.conferencedate2/09/1995
dc.source.conferencelocationBerlin Gerany
dc.source.endpage234
dc.title

Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

dc.typeProceedings paper
dspace.entity.typePublication
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