Publication:

Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

Date

2022
Journal article
https://doi.org/10.1149/2162-8777/ac7662
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dc.contributor.authorNagano, Fuya
dc.contributor.authorIacovo, Serena
dc.contributor.authorPhommahaxay, Alain
dc.contributor.authorInoue, Fumihiro
dc.contributor.authorChancerel, Francois
dc.contributor.authorNaser, Hasan
dc.contributor.authorBeyer, Gerald
dc.contributor.authorBeyne, Eric
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorNagano, Fuya
dc.contributor.imecauthorIacovo, Serena
dc.contributor.imecauthorPhommahaxay, Alain
dc.contributor.imecauthorInoue, Fumihiro
dc.contributor.imecauthorChancerel, Francois
dc.contributor.imecauthorNaser, Hasan
dc.contributor.imecauthorBeyer, Gerald
dc.contributor.imecauthorBeyne, Eric
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecNagano, Fuya::0000-0001-5315-8694
dc.contributor.orcidimecIacovo, Serena::0000-0002-0826-9165
dc.contributor.orcidimecPhommahaxay, Alain::0000-0001-8672-2386
dc.contributor.orcidimecChancerel, Francois::0000-0003-4512-1634
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecBeyne, Eric::0000-0002-3096-050X
dc.date.accessioned2022-06-30T14:27:27Z
dc.date.available2022-06-25T02:28:41Z
dc.date.available2022-06-30T14:27:27Z
dc.date.issued2022
dc.identifier.doi10.1149/2162-8777/ac7662
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40022
dc.publisherELECTROCHEMICAL SOC INC
dc.source.beginpage063012
dc.source.issue6
dc.source.journalECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
dc.source.numberofpages10
dc.source.volume11
dc.subject.keywordsTECHNOLOGY
dc.subject.keywordsTUNGSTEN
dc.title

Void Formation Mechanism Related to Particles During Wafer-to-Wafer Direct Bonding

dc.typeJournal article
dspace.entity.typePublication
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