Publication:

Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour

Date

2003
Proceedings Paper
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dc.contributor.authorKaushik, Vidya
dc.contributor.authorRöhr, Erika
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorDelabie, Annelies
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorClaes, Martine
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWitters, Thomas
dc.contributor.authorManabe, Y.
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-15T05:07:45Z
dc.date.available2021-10-15T05:07:45Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7723
dc.source.beginpage62
dc.source.conferenceExtended Abstracts International Workshop on Gate Insulator - IWGI
dc.source.conferencedate6/11/2003
dc.source.conferencelocationTokyo Japan
dc.source.endpage63
dc.title

Effects of interactions between HfO2 and poly-Si on MOSCAP and MESFET electrical behaviour

dc.typeProceedings paper
dspace.entity.typePublication
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